HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS

HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VCE,,at) of 0.2 V at 200mA • Typ VBE of 0.8 V at 200 mA • Typ fT of 50 MHz at 10 V, 100mA

文件：116.97 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar NPN Device in a Hermetically sealed TO5 Metal Package

文件：11 Kbytes 页数：1 Pages

SEME-LAB

Trans GP BJT NPN 80V 1A 3-Pin TO-5

NJS

Package：TO-205AA，TO-5-3 金属罐；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：POWER BJT

Microchip

微芯科技