Rad-hard 60 V, 0.6 A PNP transistor

Features • Hermetic packages • ESCC qualified • 100 krad Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and ava

文件：276.79 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Rad-hard 60 V, 0.6 A PNP transistor

Features • Hermetic packages • ESCC qualified • 100 krad Description The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and ava

文件：276.79 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

General Purpose Transistor

General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-23 package which is designed for low power surface mount applications. Features • We declare that the material of product compliance with RoHS requiremen

文件：383.06 Kbytes 页数：5 Pages

FS

General Purpose Transistor

General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-323/SC−70 package which is designed for low power surface mount applications. Features • We declare that the material of product compliance with RoHS requ

文件：270.56 Kbytes 页数：3 Pages

FS

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

文件：68.47 Kbytes 页数：2 Pages

MICROSEMI

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