2A, 1000V N-CHANNEL POWER MOSFET

The UTC 2N100-C provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device issuitable for use as a load switch or in PWM applications. RDS(ON) ≤ 8.5Ω @ VGS=10V, ID=1.0A Low Reverse Transfer Capacitance Fast Switching Capability Avalanche Energy Specified Improved dv/dt Capability, High Ruggedness;

UTC

友顺

Isc N-Channel MOSFET Transistor

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ISC

无锡固电

1000V,2A N-Channel MOSFET

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AOSMD

万国半导体

1000V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

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Fairchild

仙童半导体