2ED3142MC12L

2ED314xMC12L (2ED-X3 Compact) Dual-channel isolated gate driver IC with dead-time control

Features •Dual-channelisolatedgatedriver •Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs •Upto6.5Atypicalpeakoutputcurrent •39nspropagationdelaywith5nschannel-to-channeldelaymismatch(skew) •35Vabsolutemaximumoutputsupplyvoltage •Highc

2ED3142MC12L

6.5 A, 5.7 kV (rms) dual-channel isolated gate driver with deadtime control, UL 1577 certified, 12.5 V UVLO; • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs\n• 2300 V functional offset voltage capable for selected applications\n• Galvanically isolated coreless transformer gate driverUp to 6.5 A typical peak output current\n• 39 ns propagation delay35 V absolute maximum output supply voltage\n• High common-mode transient immunity CMTI > 200 kV/µsActive shutdown and short circuit clamping\n• 3.3 V and 5 V input supply voltageDisable pin switches outputs off\n• 12.5 V/ 13.6 V undervoltage lockout (UVLO) protection with hysteresis\n\n优势:\n• 8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance\n• Tight part-to-part propogation delay skew of 8 ns max\n• Tight channel-to-channel propogation delay skew of 5ns max\n• Dual-channel configuation reduces footprint\n• Dead time control\n• UL 1577 VISO = 6.84 kV (rms) for 1 s, VISO = 5.7 kV (rms) for 1 min\n• IEC 60747-17 (planned) with VIORM = 1767 V (peak, reinforced)\n \n\n\n;