2ED314xMC12L (2ED-X3 Compact) Dual-channel isolated gate driver IC with dead-time control

Features • Dual-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 39 ns propagation delay with 5 ns channel-to-channel delay mismatch (skew) • 35 V absolute maximum output supply voltage • High c

文件：4.12909 Mbytes 页数：37 Pages

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6.5 A、5.7 kV (rms) 双通道隔离栅极驱动器，带死区控制，经 UL 1577 认证，11 V UVLO

• For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs\n• 2300 V functional offset voltage capable for selected applications\n• Galvanically isolated coreless transformer gate driver\n• Up to 6.5 A typical peak output current\n• 39 ns propagation delay\n• 35 V absolute maximum out;

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DIP

HW

汉威光电

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SOP8

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14-DSO

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