| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
DC/DC CONVERTERS - 9V OUTPUT [ReliabilityInc.] | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | ||
DC/DC CONVERTERS - 9V OUTPUT [ReliabilityInc.] | ETC1List of Unclassifed Manufacturers 未分类制造商 | | ||
DC/DC CONVERTERS - 9V OUTPUT [ReliabilityInc.] | ETC1List of Unclassifed Manufacturers 未分类制造商 | | ||
650 V half bridge gate driver with integrated bootstrap diode Description The2ED2109(4)S06F(J)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithdependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnega | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | ||
650 V half bridge gate driver with integrated bootstrap diode Description The2ED2108(4)S06F(J)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithdependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnega | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650 V half bridge gate driver with integrated bootstrap diode Description The2ED21091S06Fisahighvoltage,highspeedpowerMOSFETandIGBTdriverwithdependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnegativevol | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650 V high-side and low-side gate driver with integrated bootstrap diode Description The2ED2106(4)S06F(J)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnegat | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650 V half bridge gate driver with integrated bootstrap diode Description The2ED2108(4)S06F(J)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithdependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnega | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650 V half bridge gate driver with integrated bootstrap diode Description The2ED2109(4)S06F(J)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithdependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnega | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650 V high-side and low-side gate driver with integrated bootstrap diode Description The2ED2106(4)S06F(J)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnegat | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650 V half bridge gate driver with integrated bootstrap diode Description The2ED21091S06Fisahighvoltage,highspeedpowerMOSFETandIGBTdriverwithdependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnegativevol | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650 V half bridge gate driver with integrated bootstrap diode Description The2ED2108(4)S06F(J)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithdependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnega | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650 V half bridge gate driver with integrated bootstrap diode Description The2ED21091S06Fisahighvoltage,highspeedpowerMOSFETandIGBTdriverwithdependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnegativevol | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650 V high-side and low-side gate driver with integrated bootstrap diode Description The2ED2106(4)S06F(J)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnegat | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650 V half bridge gate driver with integrated bootstrap diode Description The2ED2109(4)S06F(J)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithdependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnega | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650 V half bridge gate driver with integrated bootstrap diode Description The2ED21091S06Fisahighvoltage,highspeedpowerMOSFETandIGBTdriverwithdependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnegativevol | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650 V half bridge gate driver with integrated bootstrap diode Description The2ED2108(4)S06F(J)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithdependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnega | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650 V half bridge gate driver with integrated bootstrap diode Description The2ED2109(4)S06F(J)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithdependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnega | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650 V high-side and low-side gate driver with integrated bootstrap diode Description The2ED2106(4)S06F(J)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnegat | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
650 V half bridge gate driver with integrated bootstrap diode Description The2ED2109(4)S06F(J)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithdependenthighandlowsidereferencedoutputchannels.BasedonInfineon’sSOI-technologythereisanexcellentruggednessandnoiseimmunitywithcapabilitytomaintainoperationallogicatnega | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |
详细参数
- 型号：
2E
- 功能描述：
DC/DC CONVERTERS - 9V OUTPUT
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
02+ |
2 |
询价 | |||||
RELIABIL |
23+ |
模块 |
595 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
询价 | ||
RELIABILI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
询价 | ||
RELIABILI |
18+ |
2173 |
公司大量全新正品 随时可以发货 |
询价 | |||
RELIABILI |
2022+ |
MODULE |
7300 |
原装现货 |
询价 | ||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
询价 | ||
RELIABILITY |
22+ |
NA |
1120 |
中国航天工业部战略合作伙伴行业领导者 |
询价 | ||
RELIABIL |
24+25+/26+27+ |
车规-电源模块 |
3280 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
RELIABILITY |
23+ |
630 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
2339+ |
模块 |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 |
相关规格书
更多- 2E12R9E
- 2E13UM
- 2E16UM
- 2E2.5UM
- 2E2-104
- 2E2A-DD-505-ISG
- 2E2A-DE-505-ISG
- 2E2A-EE-505-ISG
- 2E2B-DE-505
- 2E2B-EE-505-ISG
- 2E4PT2.4
- 2E4UM
- 2E5PT4.8
- 2E5R9
- 2E-6
- 2E63UM
- 2E-6PT-2.75
- 2E-6PT-5.5
- 2E8PT2.75
- 2E8PT5.5
- 2E8PT8.25
- 2E8UM
- 2EB
- 2EB17H115
- 2EB1LB
- 2EB3500A52
- 2EB410A8
- 2EB612R115
- 2ED020I06-FI
- 2ED020I12-F
- 2ED020I12F2XT
- 2ED020I12FAXUMA1
- 2ED020I12-FI
- 2ED020I12FIXUMA1
- 2ED100E12-F_EVAL
- 2ED300C17-S
- 2ED300C17-SROHS
- 2ED300C17-ST ROHS
- 2ED300E17-SFO_EVAL
- 2EDL1S
- 2EDL1SCM
- 2EDL4
- 2EDL4CM
- 2EDN
- 2EE-01
相关库存
更多- 2E12UM
- 2E15UM
- 2E1UM
- 2E20UM
- 2E2-2E-505
- 2E2A-DE-505
- 2E2A-EE-505
- 2E2B-DD-505-ISG
- 2E2B-DE-505-ISG
- 2E2C-DD-505
- 2E-4PT-2.4
- 2E50UM
- 2E-5PT-4.8
- 2E5UM
- 2E60UM
- 2E6PT2.75
- 2E6PT5.5
- 2E6UM
- 2E-8PT-2.75
- 2E-8PT-5.5
- 2E-8PT-8.25
- 2E911-5382TO5
- 2EB1
- 2EB17H230
- 2EB3
- 2EB3500R115
- 2EB612A48
- 2ED020I06FI
- 2ED020I06FIXUMA1
- 2ED020I12-F2
- 2ED020I12FA
- 2ED020I12FAXUMA2
- 2ED020I12FIXT
- 2ED020I12FNT
- 2ED100E12-F2_EVAL
- 2ED300C17-S ROHS
- 2ED300C17-ST
- 2ED300E17-S
- 2EDL05I06BFXUMA1
- 2EDL1SC
- 2EDL1SM
- 2EDL4C
- 2EDL4M
- 2EE
- 2EE-02
