N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications  LCC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M

文件：1.11956 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

28A 500V N-channel enhanced field effect transistor

文件：932.83 Kbytes 页数：5 Pages

YFWDIODE

佑风微

28A竊?00V N-CHANNEL MOSFET

文件：347.24 Kbytes 页数：5 Pages

KIA

可易亚半导体

包装：散装 类别：工具 刀，切割工具 描述：SHEAR,IND,DRESS,8\

ATG

丝印：28NM60ND；Package：D2PAK；N-channel 600 V, 0.13 廓 typ., 23 A FDmesh??II Power MOSFETs in D짼PAK, TO-220FP, TO-220 and TO-247 packages

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

文件：1.67094 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：28NM60ND；Package：TO-220FP；N-channel 600 V, 0.13 廓 typ., 23 A FDmesh??II Power MOSFETs in D짼PAK, TO-220FP, TO-220 and TO-247 packages

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

文件：1.67094 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：28NM60ND；Package：TO-220；N-channel 600 V, 0.13 廓 typ., 23 A FDmesh??II Power MOSFETs in D짼PAK, TO-220FP, TO-220 and TO-247 packages

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

文件：1.67094 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：28NM60ND；Package：TO-247；N-channel 600 V, 0.13 廓 typ., 23 A FDmesh??II Power MOSFETs in D짼PAK, TO-220FP, TO-220 and TO-247 packages

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

文件：1.67094 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：28N04NM5；Package：TDSON-8FL；OptiMOSTM 5 Power-Transistor, 40 V

文件：1.34045 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：28N50AP；Package：TO-247；28A 500V N-channel enhanced field effect transistor

文件：932.83 Kbytes 页数：5 Pages

YFWDIODE

佑风微