丝印：28225；Package：SOIC(D)；TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver

1 Features • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V • Wide Power System Train Input Voltage: 3V Up to 27V • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude • Capable to Drive MOSFETs with ≥40

文件：2.06215 Mbytes 页数：43 Pages

TI

德州仪器

丝印：28225；Package：SOIC(D)；TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver

1 Features • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V • Wide Power System Train Input Voltage: 3V Up to 27V • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude • Capable to Drive MOSFETs with ≥40

文件：2.06215 Mbytes 页数：43 Pages

TI

德州仪器

丝印：28225；Package：SOIC(D)；TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver

1 Features • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V • Wide Power System Train Input Voltage: 3V Up to 27V • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude • Capable to Drive MOSFETs with ≥40

文件：2.06215 Mbytes 页数：43 Pages

TI

德州仪器

丝印：28225；Package：SOIC(D)；TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver

1 Features • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V • Wide Power System Train Input Voltage: 3V Up to 27V • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude • Capable to Drive MOSFETs with ≥40

文件：2.06215 Mbytes 页数：43 Pages

TI

德州仪器

丝印：28225；Package：SOIC(D)；TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver

1 Features • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V • Wide Power System Train Input Voltage: 3V Up to 27V • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude • Capable to Drive MOSFETs with ≥40

文件：2.06215 Mbytes 页数：43 Pages

TI

德州仪器

丝印：28225；Package：SOIC(D)；TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver

1 Features • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V • Wide Power System Train Input Voltage: 3V Up to 27V • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude • Capable to Drive MOSFETs with ≥40

文件：2.06215 Mbytes 页数：43 Pages

TI

德州仪器

丝印：28225；Package：SOIC(D)；TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver

1 Features • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V • Wide Power System Train Input Voltage: 3V Up to 27V • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude • Capable to Drive MOSFETs with ≥40

文件：2.06215 Mbytes 页数：43 Pages

TI

德州仪器

SIM CARD CONNECTORS QUICK REFERENCE GUIDE

文件：1.81373 Mbytes 页数：6 Pages

TEC

泰科电子

Bobbin Wound Surface Mount Inductors

文件：133.32 Kbytes 页数：3 Pages

MURATA

村田

Bobbin Wound Surface Mount Inductors

文件：280.47 Kbytes 页数：3 Pages

MURATA

村田