丝印：28225；Package：SOIC(D)；TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver

1 Features • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V • Wide Power System Train Input Voltage: 3V Up to 27V • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude • Capable to Drive MOSFETs with ≥40

文件：2.06215 Mbytes 页数：43 Pages

TI

德州仪器

丝印：28225；Package：SOIC(D)；TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver

1 Features • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V • Wide Power System Train Input Voltage: 3V Up to 27V • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude • Capable to Drive MOSFETs with ≥40

文件：2.06215 Mbytes 页数：43 Pages

TI

德州仪器

丝印：28225；Package：SOIC(D)；TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver

1 Features • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V • Wide Power System Train Input Voltage: 3V Up to 27V • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude • Capable to Drive MOSFETs with ≥40

文件：2.06215 Mbytes 页数：43 Pages

TI

德州仪器

SOT23-5

TI/德州仪器

上传：深圳台格电子科技有限公司

SOT23-5

TI

德州仪器

上传：深圳市铭微讯电子有限公司