TPS28225D集成电路（IC）的栅极驱动器规格书PDF中文资料

TPS28225D属于集成电路（IC）的栅极驱动器。由德州仪器制造生产的TPS28225D栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。

1 Features

• Drives Two N-Channel MOSFETs with 14ns

Adaptive Dead Time

• Wide Gate Drive Voltage: 4.5V Up to 8.8V With

Best Efficiency at 7V to 8V

• Wide Power System Train Input Voltage: 3V Up to

27V

• Wide Input PWM Signals: 2.0V up to 13.2V

Amplitude

• Capable to Drive MOSFETs with ≥40A Current per

Phase

• High Frequency Operation: 14ns Propagation

Delay and 10ns Rise/Fall Time Allow FSW – 2MHz

• Capable to Propagate <30ns Input PWM Pulses

• Low-Side Driver Sink On-Resistance (0.4Ω)

Prevents dV/dT Related Shoot-Through Current

• 3-State PWM Input for Power Stage Shutdown

• Space Saving Enable (Input) and Power Good

(Output) Signals on Same Pin

• Thermal Shutdown

• UVLO Protection

• Internal Bootstrap Diode

• Economical SOIC-8 and Thermally Enhanced

3mm x 3mm VSON-8 Packages

• High Performance Replacement for Popular 3-

State Input Drivers

2 Applications

• Multi-Phase DC-to-DC Converters with Analog or

Digital Control

• Desktop and Server VRMs and EVRDs

• Portable and Notebook Regulators

• Synchronous Rectification for Isolated Power

Supplies

3 Description

The TPS28225 is a high-speed driver for N-channel

complimentary driven power MOSFETs with adaptive

dead-time control. This driver is optimized for use in

variety of high-current one and multi-phase DC-to-DC

converters. The TPS28225 is a solution that provides

high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8V gate

drive voltage, 14ns adaptive dead-time control, 14ns

propagation delays and high-current 2A source and

4A sink drive capability. The 0.4Ω impedance for the

lower gate driver holds the gate of power MOSFET

below its threshold and ensures no shoot-through

current at high dV/dt phase node transitions. The

bootstrap capacitor charged by an internal diode

allows use of N-channel MOSFETs in a half-bridge

configuration.