512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

文件：69.84 Kbytes 页数：12 Pages

MICROCHIP

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

文件：69.84 Kbytes 页数：12 Pages

MICROCHIP

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

文件：69.84 Kbytes 页数：12 Pages

MICROCHIP

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

文件：69.84 Kbytes 页数：12 Pages

MICROCHIP

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

文件：69.84 Kbytes 页数：12 Pages

MICROCHIP

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

文件：69.84 Kbytes 页数：12 Pages

MICROCHIP

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

文件：69.84 Kbytes 页数：12 Pages

MICROCHIP

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

文件：69.84 Kbytes 页数：12 Pages

MICROCHIP

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

文件：69.84 Kbytes 页数：12 Pages

MICROCHIP

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

文件：69.84 Kbytes 页数：12 Pages

MICROCHIP

微芯科技