RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

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FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifier

文件：670.16 Kbytes 页数：16 Pages

恩XP

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：1.47981 Mbytes 页数：18 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

文件：594.33 Kbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

可调电容

Knowles

楼氏电子

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电容器 微调器，可变电容器 描述：CAP TRIMMER 0.6-4.5PF 500V SMD

Knowles Johanson Manufacturing