High-Voltage Mica Capacitors Rectangular Case, High-Current and High-Voltage Circuits

文件：116.63 Kbytes 页数：2 Pages

CDE

Precision ESD Safe Conductive Drivers

文件：152.33 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

KNOB

文件：72.28 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印：27200；Package：SOIC(D)；UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

文件：2.20722 Mbytes 页数：44 Pages

TI

德州仪器

丝印：27200；Package：SOIC(D)；UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

文件：2.20722 Mbytes 页数：44 Pages

TI

德州仪器

丝印：27200；Package：VSON(DRM)；UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

文件：2.20722 Mbytes 页数：44 Pages

TI

德州仪器

丝印：27200；Package：VSON(DRM)；UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

文件：2.20722 Mbytes 页数：44 Pages

TI

德州仪器

丝印：27200；Package：VSON(DRM)；UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

文件：2.20722 Mbytes 页数：44 Pages

TI

德州仪器

WS-G5/2 - 警告标识

警告牌，用于设备端子G 5，完全覆盖端子表面，2位

PhoenixContact

菲尼克斯

WS-G5/3 - 警告标识

警告牌，用于设备端子G 5，完全覆盖端子表面，3位

PhoenixContact

菲尼克斯