丝印：2530；Package：WSON；20 V P-Channel NexFET Power MOSFETs

文件：779.36 Kbytes 页数：14 Pages

TI

德州仪器

丝印：2530；Package：WSON；20 V P-Channel NexFET Power MOSFETs

文件：779.36 Kbytes 页数：14 Pages

TI

德州仪器

丝印：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

文件：476.64 Kbytes 页数：11 Pages

TI

德州仪器

丝印：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

文件：476.64 Kbytes 页数：11 Pages

TI

德州仪器

丝印：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

文件：476.64 Kbytes 页数：11 Pages

TI

德州仪器

丝印：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

文件：476.64 Kbytes 页数：11 Pages

TI

德州仪器

丝印：2530C04L；Package：PG-DSO-8；MOSFET OptiMOS™ 3 Power‑Transistors, 40 V

Features • Complementary N‑ and P‑channel • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.1634 Mbytes 页数：18 Pages

Infineon

英飞凌

Capacitive Sensor

Features ■Rectangular, height 14mm ■Active face on top ■Plastic, PBT‐GF30‐V0 ■Fine adjustment via potentiometer ■DC 3-wire, 10…65 VDC ■NO contact, PNP output ■Cable connection Functional principle Capacitive proximity switches are designed for non-contact and wear-free detection of elec

文件：96.2 Kbytes 页数：2 Pages

TURCKTurck, Inc.

图尔克德国图尔克集团公司

Capacitive Sensor

Features ■Rectangular, height 14mm ■Active face on top ■Plastic, PBT‐GF30‐V0 ■Fine adjustment via potentiometer ■DC 3-wire, 10…65 VDC ■NO contact, PNP output ■M8 × 1 connector Functional principle Capacitive proximity switches are designed for non-contact and wear-free detection of elec

文件：109.73 Kbytes 页数：2 Pages

TURCKTurck, Inc.

图尔克德国图尔克集团公司

Capacitive Sensor

Features ■Rectangular, height 14mm ■Active face on top ■Plastic, PBT‐GF30‐V0 ■Fine adjustment via potentiometer ■DC 3-wire, 10…65 VDC ■NO contact, NPN output ■Cable connection Functional principle Capacitive proximity switches are designed for non-contact and wear-free detection of elec

文件：96.87 Kbytes 页数：2 Pages

TURCKTurck, Inc.

图尔克德国图尔克集团公司