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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
23N50	文件：345.38 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
23N50E	文件：421.39 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
23N50E	文件：549.93 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
23N50E	文件：565.63 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFETFeatures Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
23N50E	文件：557.82 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V)	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMH23N50E	文件：268.91 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FMH23N50E	文件：557.82 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V)	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMH23N50ES	文件：565.63 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFETFeatures Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMR23N50E	文件：545.78 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMR23N50ES	文件：556.26 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMV23N50E	文件：421.39 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMV23N50ES	文件：549.93 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
IRFP23N50L	文件：104.21 Kbytes Page：8 Pages	PowerMOSFET(Vdss=500V,Rds(on)=0.190ohm,Id=23A) FeaturesandBenefits •SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity Application	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFP23N50L	文件：159.51 Kbytes Page：8 Pages	PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-freeAvailab	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFP23N50L	文件：444.61 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.235Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFP23N50L	文件：200.94 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFP23N50L	文件：223.5 Kbytes Page：11 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFP23N50L	文件：236.46 Kbytes Page：10 Pages	PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFP23N50LPBF	文件：223.5 Kbytes Page：11 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFP23N50LPBF	文件：202.13 Kbytes Page：9 Pages	HEXFETPowerMOSFET(VDSS=500V,RDS(on)typ.=0.190廓,Trrtyp.=170ns,ID=23A) FeaturesandBenefits •SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity •Lead-Free	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市赛美科科技有限公司	23N50G	FUJI		TO-3P	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市星辰微电科技有限公司	23N50PN	SILAN/士兰微	22+	TO-3P	150000	挂的就有,常备现货	询价
深圳市华博特电子有限公司	23N50QG-T3B-T	UTC	23/22+	TO3PB	6000	20年老代理.原厂技术支持	询价
深圳市维尔达电子有限公司	23N57E	FUJITS	2023+	TO-3P	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
瀚佳科技(深圳)有限公司	23N57E	FUJITS	21+	TO-3P	35210	一级代理/放心采购	询价
深圳市国宇半导体科技有限公司	23N57E	FUJI/富士电机	23+	TO-3PF	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	23N57E	FUJI/富士电机	TO-3PF	22+	6000	十年配单,只做原装	询价
深圳市创新迹电子有限公司	23N57E	FUJI/富士电机	22+	TO-3PF	25000	只做原装进口现货,专注配单	询价
深圳市宏捷佳电子科技有限公司	23N57E	FUJI	24+	TO-3PF	12300	独立分销商,公司只做原装,诚心经营,免费试样正品保证	询价
深圳市安富世纪电子有限公司	23N60C3	INFINEON/英飞凌	23+	TO-220	8000	只做原装现货	询价

更多23N50G供应商更新时间2024-6-23 10:32:00

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