丝印：23N；Package：X2-DFN1310-6；20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Footprint of Just 1.3mm2  Ultra Low Profile Package — 0.4mm Profile  On Resistance

文件：576.32 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：23N10LF2；Package：PG-HSOF-8；OptiMOS™ 5 Linear FET 2, 100 V

Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑resistance RDS(on) • Wide safe operating area SOA • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.18853 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：23N80K5；Package：TO-220；N-channel 800 V, 0.23 廓 typ., 16 A MDmesh??K5 Power MOSFET in a TO-220 package

Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high e

文件：722.43 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：23N06；Package：TO-252；SUD23N06

FEATURES VDS (V) = 60V ID= 30A (VGS=10V) RDS(ON) 25m (VGS =10V) RDS(ON) 30m (VGS = 4.5V)

文件：448.85 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：23N06；Package：TO-252；SUD23N06

FEATURES VDS (V) = 60V ID= 30A (VGS=10V) RDS(ON) 25m (VGS =10V) RDS(ON) 30m (VGS = 4.5V)

文件：448.85 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：23N06；Package：TO-252；MOSFET

FEATURES VDS (V) = 60V ID= 30A (VGS=10V) RDS(ON)

文件：464.37 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：23NF；Package：SOT-23；TPS784-Q1 Automotive, 300-mA, High-PSRR Low-Dropout Voltage Regulator With High Accuracy and Enable

1 Features • AEC-Q100 qualified for automotive applications: – Temperature grade 1: –40°C to +125°C, TA • Device junction temperature: –40°C to +150°C, TJ • Input voltage range: 1.65 V to 6.0 V • Available output voltages: – Adjustable option: 1.2 V to 5.5 V – Fixed options: 0.65 V to 5.0 V

文件：4.86215 Mbytes 页数：53 Pages

TI

德州仪器

丝印：23N80K5；Package：TO-220FP；N-channel 800 V, 0.23 廓 typ., 16 A MDmesh??K5 Power MOSFET in a TO-220FP package

文件：714.94 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：23NS3；Package：PowerFLATTM3.3x3.3；N-channel 30 V, 0.0027 ??typ., 23 A STripFET??H7 Power MOSFET plus monolithic Schottky in a PowerFLAT??3.3 x 3.3

文件：682.69 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：23N80K5；Package：TO-247；N-channel 800 V, 0.23 廓 typ., 16 A MDmesh??K5 Power MOSFET in a TO-247 package

文件：699.72 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体