23N

型号：DMN2300UFL4Q-7；Package：X2-DFN1310-6；20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features FootprintofJust1.3mm2 UltraLowProfilePackage—0.4mmProfile OnResistance

23N10LF2

型号：IPT023N10NM5LF2；Package：PG-HSOF-8；OptiMOS™ 5 Linear FET 2, 100 V

Features •Idealforhot‑swapande‑fuseapplications •Verylowon‑resistanceRDS(on) •WidesafeoperatingareaSOA •N‑channel,normallevel •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

23N80K5

型号：STP23N80K5；Package：TO-220；N-channel 800 V, 0.23 廓 typ., 16 A MDmesh??K5 Power MOSFET in a TO-220 package

Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh™K5 technologybasedonaninnovativeproprietary verticalstructure.Theresultisadramatic reductioninon-resistanceandultra-lowgate chargeforapplicationsrequiringsuperiorpower densityandhighe

23N06

型号：SUD23N06；Package：TO-252；SUD23N06

FEATURES VDS(V)=60V ID=30A(VGS=10V) RDS(ON)25m(VGS=10V) RDS(ON)30m(VGS=4.5V)

23N06

型号：SUD23N06-31；Package：TO-252；SUD23N06

FEATURES VDS(V)=60V ID=30A(VGS=10V) RDS(ON)25m(VGS=10V) RDS(ON)30m(VGS=4.5V)

23N06

型号：SUD23N06-31；Package：TO-252；MOSFET

FEATURES VDS(V)=60V ID=30A(VGS=10V) RDS(ON)

23NF

型号：TPS78425QDBVRQ1；Package：SOT-23；TPS784-Q1 Automotive, 300-mA, High-PSRR Low-Dropout Voltage Regulator With High Accuracy and Enable

1Features •AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:–40°Cto+125°C,TA •Devicejunctiontemperature:–40°Cto+150°C,TJ •Inputvoltagerange:1.65Vto6.0V •Availableoutputvoltages: –Adjustableoption:1.2Vto5.5V –Fixedoptions:0.65Vto5.0V

23N80K5

型号：STF23N80K5；Package：TO-220FP；N-channel 800 V, 0.23 廓 typ., 16 A MDmesh??K5 Power MOSFET in a TO-220FP package

23NS3

型号：STL23NS3LLH7；Package：PowerFLATTM3.3x3.3；N-channel 30 V, 0.0027 ??typ., 23 A STripFET??H7 Power MOSFET plus monolithic Schottky in a PowerFLAT??3.3 x 3.3

23N80K5

型号：STW23N80K5；Package：TO-247；N-channel 800 V, 0.23 廓 typ., 16 A MDmesh??K5 Power MOSFET in a TO-247 package