丝印：23A；Package：QFN1418-10L；Low On Resistance, Dual SPDT Analog Switch

文件：558.85 Kbytes 页数：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：23A；Package：QFN1418-10L；Low On Resistance, Dual SPDT Analog Switch

文件：558.85 Kbytes 页数：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：23A；Package：SOT-563B；Integrated N-Channel Power MOSFET And Schottky Barrier Diode

文件：5.05356 Mbytes 页数：7 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：23A；Package：SOT-563B；Integrated N-Channel Power MOSFET And Schottky Barrier Diode

文件：5.05356 Mbytes 页数：7 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

0.3 Watts, 15 Volts, Class A Linear to 2300 MHz

GENERAL DESCRIPTION The23A003 is a COMMON EMITTER transistor capable of providing 0.3 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliabili

文件：29.44 Kbytes 页数：1 Pages

GHZTECH

0.5 Watts, 20 Volts, Class A Linear to 2300 MHz

GENERAL DESCRIPTION The 23A005 is a COMMON EMITTER transistor capable of providing 0.5 Watt of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliabili

文件：110.44 Kbytes 页数：3 Pages

GHZTECH

1.7 Watts, 20 Volts, Class A Linear to 2300 MHz

GENERAL DESCRIPTION The 23A017 is a COMMON EMITTER transistor capable of providing 1.7 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliabil

文件：33.1 Kbytes 页数：2 Pages

GHZTECH

2.5 Watts, 20 Volts, Class A Linear to 2300 MHz

GENERAL DESCRIPTION The 23A025 is a COMMON EMITTER transistor capable of providing 2.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliabil

文件：32.93 Kbytes 页数：2 Pages

GHZTECH

1Mbit SPI Serial SRAM with SDI and SQI Interface

Description The Microchip Technology Inc. 23A1024/23LC1024 are 1 Mbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK), a data in line (SI) and a data out line (SO). Access to the dev

文件：598.49 Kbytes 页数：32 Pages

MICROCHIP

微芯科技

1-Mbit SPI Serial SRAM with SDI and SQI Interface

Features • SPI Bus Interface: - SPI compatible - SDI (dual) and SQI (quad) compatible - 20 MHz Clock rate for all modes • Low-Power CMOS Technology: - Read current: 3 mA at 5.5V, 20 MHz - Standby current: 4 A at +85°C • Unlimited Read and Write Cycles • Zero Write Time • 128-Kbit x 8-bi

文件：663.37 Kbytes 页数：33 Pages

MICROCHIP

微芯科技