丝印：2341E；Package：SOT23；-20V, -4A P-Channel MOS

文件：304.78 Kbytes 页数：6 Pages

E-CMOS

飞虹高科

P-Channel Enhancement Mode MOSFET

文件：272.39 Kbytes 页数：8 Pages

ACE

P-Channel Enhancement Mode MOSFET

文件：601.14 Kbytes 页数：7 Pages

ACE

P-Channel Enhancement Mode Field Effect Transistor

Description The ACE2341B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 1.8V. This device is suitable for use as a load switch or other general applications. Features • VDS=-20V, ID=-4.1A • RDS(ON)

文件：968.12 Kbytes 页数：6 Pages

ACE