744760122A

Marking：22N；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

744760122GA

Marking：22N；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

744762122GA

Marking：22N；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

BSC022N03SG

Marking：22N03S；Package：TDSON-8；OptiMOS?? Power-Transistor

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyfornotebookDC/DCconverters •QualifiedaccordingtoJEDEC1fortargetapplications •Logiclevel/N-channel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance

STB22N60M6

Marking：22N60M6；Package：D2PAK；N-channel 600 V, 196 mΩ typ., 15 A, MDmesh™ M6 Power MOSFET in a D2PAK package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Applications •Switchingapplications •LLCconverters •BoostPFCconverters Description ThenewMDmesh™M6technologyincorporat

STF22NM60ND

Marking：22NM60ND；Package：TO-220FP；Automotive-grade N-channel 600 V, 0.17 ??typ., 17 A FDmesh??II Power MOSFET in a TO-220FP package

Description ThisFDmesh™IIPowerMOSFETwithfastrecoverybodydiodeisproducedusingMDmesh™IItechnology.Utilizinganewstriplayoutverticalstructure,thisdevicefeatureslowon-resistanceandsuperiorswitchingperformance.ItisidealforbridgetopologiesandZVSphase-shiftconverter

STW22N95K5

Marking：22N95K5；Package：TO-247；Automotive-grade N-channel 950 V

Description ThisdeviceisanN-channelPowerMOSFET developedusingSuperMESH™5technology. Thisrevolutionary,avalanche-rugged,high voltagePowerMOSFETtechnologyisbasedon aninnovativeproprietaryverticalstructure.The resultisadrasticreductioninon-resistanceand ultralow

TPS7A0320PDBVR

Marking：22NT；Package：SOT-23；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1Features •Ultra-lowIQ:200nA(typ),evenindropout •ShutdownIQ:3nA(typ) •Excellenttransientresponse(1mAto50mA) –

TPS7A0320PDBVR

Marking：22NT；Package：SOT-23；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1Features •Ultra-lowIQ:200nA(typ),evenindropout •ShutdownIQ:3nA(typ) •Excellenttransientresponse(1mAto50mA) –

TPS7A0320PDBVR

Marking：22NT；Package：SOT-23；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1Features •Ultra-lowIQ:200nA(typ),evenindropout •ShutdownIQ:3nA(typ) •Excellenttransientresponse(1mAto50mA) –