丝印：22N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：495.58 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：22N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：494.48 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：22N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：489.54 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：22N03S；Package：TDSON-8；OptiMOS?? Power-Transistor

Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • Logic level / N-channel • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance

文件：383.79 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：22N60M6；Package：D2PAK；N-channel 600 V, 196 mΩ typ., 15 A, MDmesh™ M6 Power MOSFET in a D2PAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporat

文件：631.75 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：22NM60ND；Package：TO-220FP；Automotive-grade N-channel 600 V, 0.17 ??typ., 17 A FDmesh??II Power MOSFET in a TO-220FP package

Description This FDmesh™ II Power MOSFET with fastrecovery body diode is produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converter

文件：790.51 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：22N95K5；Package：TO-247；Automotive-grade N-channel 950 V

Description This device is an N-channel Power MOSFET developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low

文件：884.15 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：22NT；Package：SOT-23；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features • Ultra-low IQ: 200 nA (typ), even in dropout • Shutdown IQ: 3 nA (typ) • Excellent transient response (1 mA to 50 mA) –

文件：3.2169 Mbytes 页数：50 Pages

TI1

德州仪器

丝印：22NT；Package：SOT-23；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features • Ultra-low IQ: 200 nA (typ), even in dropout • Shutdown IQ: 3 nA (typ) • Excellent transient response (1 mA to 50 mA) –

文件：3.21955 Mbytes 页数：50 Pages

TI1

德州仪器

丝印：22NT；Package：SOT-23；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features • Ultra-low IQ: 200 nA (typ), even in dropout • Shutdown IQ: 3 nA (typ) • Excellent transient response (1 mA to 50 mA) –

文件：3.21839 Mbytes 页数：50 Pages

TI1

德州仪器