丝印：2227EP；Package：SOIC；HIGH PRECISION, LOW NOISE OPERATIONAL AMPLIFIER

1FEATURES • Low Noise: 3 nV/√Hz • Wide Bandwidth: 8 MHz, 2.3 V/μs • Settling Time: 5 μs • High CMRR: 138 dB (Typical) • High Open-Loop Gain: 160 dB (Typical) • Low Input Bias Current: 10 nA Maximum at 25°C • Low Offset Voltage: 100 μV Maximum at 25°C • Wide Supply Range: ±2.5 V to ±18 V

文件：551.89 Kbytes 页数：24 Pages

TI

德州仪器

丝印：2227EP；Package：SOIC；HIGH PRECISION, LOW NOISE OPERATIONAL AMPLIFIER

1FEATURES • Low Noise: 3 nV/√Hz • Wide Bandwidth: 8 MHz, 2.3 V/μs • Settling Time: 5 μs • High CMRR: 138 dB (Typical) • High Open-Loop Gain: 160 dB (Typical) • Low Input Bias Current: 10 nA Maximum at 25°C • Low Offset Voltage: 100 μV Maximum at 25°C • Wide Supply Range: ±2.5 V to ±18 V

文件：551.89 Kbytes 页数：24 Pages

TI

德州仪器

丝印：2222A；Package：SOT-223；NPN General-Purpose Amplifier

Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19.

文件：366.08 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：2222A；Package：SOT-223；NPN Silicon Planar Epitaxial Transistor

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features • PNP Complement is PZT2907AT1 • The SOT−223 Package Can be Soldered Using Wave or

文件：113.77 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：2227；Package：QFN；GaAs INTEGRATED CIRCUIT

FEATURES • Low insertion loss : LINS = 0.45 dB TYP. @ Vcont = +2.7 V/0 V, f = 1.0 GHz : LINS = 0.50 dB TYP. @ Vcont = +2.7 V/0 V, f = 2.0 GHz • High isolation : ISL = 21 dB TYP. @ Vcont = +2.7 V/0 V, f = 1.0 GHz • High power : Pin (0.1 dB) = 33.0 dBm TYP. @ Vcont = +2.7 V/0 V, f = 1.0 GHz • P

文件：218.01 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：222B；Zener Diodes

文件：298.22 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：2227CS；Package：8LdSOIC；Dual, Very Low Noise Amplifier

文件：740.77 Kbytes 页数：14 Pages

RENESAS

瑞萨

丝印：2227CSZ；Package：8LdSOIC；Dual, Very Low Noise Amplifier

文件：740.77 Kbytes 页数：14 Pages

RENESAS

瑞萨

丝印：222A；Package：10Ld3x3TDFN；High-Speed USB 2.0 (480Mbps) Multiplexer

文件：1.3399 Mbytes 页数：19 Pages

RENESAS

瑞萨

丝印：222A；Package：10Ld3x3TDFN；High-Speed USB 2.0 (480Mbps) Multiplexer

文件：1.3399 Mbytes 页数：19 Pages

RENESAS

瑞萨