21N06规格书应用电路供应代理谷峰半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
21N06	文件：300 bytes Page：1 Pages	Trench Mosfet	GOFORD 谷峰半导体	GOFORD
PHB21N06LT	文件：112.45 Kbytes Page：11 Pages	N-channel TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible Applications: • d.c. to d.c. co 文件：112.45 Kbytes 页数：11 Pages	PHI 飞利浦	PHI
PHB21N06LT	文件：82.44 Kbytes Page：10 Pages	TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible Applications: • d.c. to d.c. co 文件：82.44 Kbytes 页数：10 Pages	PHI 飞利浦	PHI
PHB21N06LT	文件：233.59 Kbytes Page：12 Pages	N-channel TrenchMOSÔ transistor Logic level FET FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- • d.c. to d.c. converters • swi 文件：233.59 Kbytes 页数：12 Pages	NEXPERIA 安世	NEXPERIA

更多21N06供应商更新时间2025-12-25 11:04:00