B2150W-S

Marking：215；Package：SOD-123S；2A Surface Mount Schottky Barrier Rectifiers

Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-fre

B2150W-ST

Marking：215；Package：SOD-123ST；2A Surface Mount Schottky Barrier Rectifiers

Features •Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. •Lowpowerloss,highefficiency. •Highcurrentcapability,lowforwardvoltagedrop. •Ultrahigh-speedswitching. •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-fre

BAS21A

Marking：21A；Package：SOT-23；Three Terminals SMD Switching Diodes

Features •Highreversebreakdownvoltage •Fastswitchingspeed •Lowreverseleakagecurrent •Surfacemountpackageideallysuitedforautomaticinsertion •Galvanicallyisolateddualconfigurationstosaveboardspace •RoHScompliant

BAS21C

Marking：21C；Package：SOT-23；Three Terminals SMD Switching Diodes

Features •Highreversebreakdownvoltage •Fastswitchingspeed •Lowreverseleakagecurrent •Surfacemountpackageideallysuitedforautomaticinsertion •Galvanicallyisolateddualconfigurationstosaveboardspace •RoHScompliant

BAS21GW6

Marking：21G；Package：SOT-23-6L；Surface Mount, High Voltage, Switching Diodes

Features Highreversebearkdownvoltage. Fastswitchingspeed. Lowreverseleakagecurrent. Surfacemountpackageideallysuitedforautomaticinsertion. Galvanicallyisolateddualconfigurationstosaveboardspace. LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC

BAS21GW6-AU

Marking：21G；Package：SOT-23-6L；Surface Mount, High Voltage, Switching Diodes

Features Highreversebearkdownvoltage. Fastswitchingspeed. Lowreverseleakagecurrent. Surfacemountpackageideallysuitedforautomaticinsertion. Galvanicallyisolateddualconfigurationstosaveboardspace. AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 Greenmolding

BAS21S

Marking：21S；Package：SOT-23；Three Terminals SMD Switching Diodes

Features •Highreversebreakdownvoltage •Fastswitchingspeed •Lowreverseleakagecurrent •Surfacemountpackageideallysuitedforautomaticinsertion •Galvanicallyisolateddualconfigurationstosaveboardspace •RoHScompliant

BF545B

Marking：21*；Package：SOT-23；N-channel silicon junction field-effect transistors

DESCRIPTION N-channelsymmetricalsiliconjunctionfield-effecttransistorsinaSOT23package. FEATURES •Lowleakagelevel(typ.500fA) •Highgain •Lowcut-offvoltage(max.2.2VforBF545A). APPLICATIONS •Impedanceconvertersine.g.electretmicrophonesandinfra-

EL2125CS

Marking：2125CS；Package：8LdSOIC；Ultra-Low Noise, Low Power, Wideband Amplifier

TheEL2125isanultra-lownoise,widebandamplifierthatrunsonhalfthesupplycurrentofcompetitiveparts.Itisintendedforuseinsystemssuchasultrasoundimagingwhereaverysmallsignalneedstobeamplifiedbyalargeamountwithoutaddingsignificantnoise.Itslowpowerdissipation

EL2125CS-T13

Marking：2125CS；Package：8LdSOIC；Ultra-Low Noise, Low Power, Wideband Amplifier

TheEL2125isanultra-lownoise,widebandamplifierthatrunsonhalfthesupplycurrentofcompetitiveparts.Itisintendedforuseinsystemssuchasultrasoundimagingwhereaverysmallsignalneedstobeamplifiedbyalargeamountwithoutaddingsignificantnoise.Itslowpowerdissipation