Flanged Thermowells

FEATURES „ One piece bar stock construction „ Stamped with mill traceable material and heat number „ Full penetration welds on flanged thermowell „ Standard or customized shank dimensions „ Testing and certifications including wake frequency calculations per ASME PTC 19.3 TW-2016

文件：366.75 Kbytes 页数：3 Pages

ASHCROFT

雅斯科

Flanged Thermowells

FEATURES „ One piece bar stock construction „ Stamped with mill traceable material and heat number „ Full penetration welds on flanged thermowell „ Standard or customized shank dimensions „ Testing and certifications including wake frequency calculations per ASME PTC 19.3 TW-2016

文件：366.75 Kbytes 页数：3 Pages

ASHCROFT

雅斯科

Flanged Thermowells

FEATURES „ One piece bar stock construction „ Stamped with mill traceable material and heat number „ Full penetration welds on flanged thermowell „ Standard or customized shank dimensions „ Testing and certifications including wake frequency calculations per ASME PTC 19.3 TW-2016

文件：366.75 Kbytes 页数：3 Pages

ASHCROFT

雅斯科

Flanged Thermowells

FEATURES „ One piece bar stock construction „ Stamped with mill traceable material and heat number „ Full penetration welds on flanged thermowell „ Standard or customized shank dimensions „ Testing and certifications including wake frequency calculations per ASME PTC 19.3 TW-2016

文件：366.75 Kbytes 页数：3 Pages

ASHCROFT

雅斯科

Flanged Thermowells

FEATURES „ One piece bar stock construction „ Stamped with mill traceable material and heat number „ Full penetration welds on flanged thermowell „ Standard or customized shank dimensions „ Testing and certifications including wake frequency calculations per ASME PTC 19.3 TW-2016

文件：366.75 Kbytes 页数：3 Pages

ASHCROFT

雅斯科

丝印：20W120G34AG；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HiP247-4 package

Features • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) •

文件：203.39 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：20WN170；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：74.07 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

丝印：20WN170；Package：TO-220CFM；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：74.4 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

丝印：20WN170；Package：TO-220；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：74.9 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

APEC

富鼎先进