零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-15A,RDS(ON)=105mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-14A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-13A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-13A,RDS(ON)=105mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-15A,RDS(ON)=105mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-14A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-13A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-13A,RDS(ON)=105mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT13Ampere FEATURE *Smallflatpackage.(TO-252A) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOCHENMKO CHENMKO | CHENMKO | ||
P?륝hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM HDTMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM HDTMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
P?묬hannelDPAKPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SWITCHINGP-CHANNELPOWERMOSFET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
TO-252 |
35680 |
只做进口原装QQ:373621633 |
询价 | ||
RENESAS |
21+ |
TO-252 |
2334 |
原装现货假一赔十 |
询价 | ||
RENESAS |
22+ |
TO-252 |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
RENESAS/Renesas Electronics Am |
21+ |
TO-252 |
2334 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
RENESAS |
22+ |
TO-252 |
25000 |
原装现货,价格优惠,假一罚十 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO-252 |
50000 |
只做原装正品,假一罚十,欢迎咨询 |
询价 | ||
RENESAS |
1425+ |
TO-252 |
2334 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
RENESAS |
2023+ |
TO-252 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
RENESAS |
2023+ |
TO-252 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
VB |
2019 |
IPAK |
55000 |
绝对原装正品假一罚十! |
询价 |
相关规格书
更多- 2100
- 2103
- 21143PD
- 21143-TD
- 21152-AB
- 215R3BUA33
- 22CV10AP-25
- 232CB
- 23D14
- 24128W6
- 24C01
- 24C01A
- 24C02
- 24C02M8
- 24C02W6
- 24C04
- 24C04A
- 24C04-S
- 24C08
- 24C08W6
- 24C128N
- 24C164
- 24C16N
- 24C16W6
- 24C256
- 24C32
- 24C32W6
- 24C64N
- 24C65
- 24LC01B
- 24LC01B_SN
- 24LC01B-I_SN
- 24LC02
- 24LC02B_P
- 24LC02B-I_P
- 24LC02BT_SN
- 24LC04
- 24LC04B_P
- 24LC04BT_SN
- 24LC08B
- 24LC08B_SN
- 24LC08BT_SN
- 24LC128
- 24LC128I_SN
- 24LC128T-I_SN
相关库存
更多- 2100IB
- 210895
- 21143TD
- 21152AB
- 215LT3UA31
- 215R3LASB41
- 22V10H-15JC_4
- 232CBE
- 23Z467SM
- 24256W6
- 24C016
- 24C01W6
- 24C02J
- 24C02N
- 24C03
- 24C046
- 24C04N
- 24C04W6
- 24C08N
- 24C128
- 24C16
- 24C16J
- 24C16-S
- 24C21
- 24C256N
- 24C32N
- 24C64
- 24C64W6
- 24C65_SM
- 24LC01B_P
- 24LC01B-I_P
- 24LC01BT_SN
- 24LC02B
- 24LC02B_SN
- 24LC02B-I_SN
- 24LC02BT-I_SN
- 24LC04B
- 24LC04B_SN
- 24LC08
- 24LC08B_P
- 24LC08B-I_SN
- 24LC08BT-I_SN
- 24LC128-I_P
- 24LC128-I_SN
- 24LC128T-I_STA37