丝印：20240NS；Package：TO-263-2L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：278.87 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：20240NS；Package：TO-263-2L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：278.87 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：20240NT；Package：TO-220-3L；72A, 200V N-CHANNEL MOSFET

DESCRIPTION SVT20240NT(P7)(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：278.87 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：2024Q1；Package：SOIC；POWER-DISTRIBUTION SWITCHES

1FEATURES • Qualified for Automotive Applications • 33-mΩ (5-V Input) High-Side MOSFET Switch • Short-Circuit and Thermal Protection • Overcurrent Logic Output • Operating Range: 2.7 V to 5.5 V • Logic-Level Enable Input • Typical Rise Time: 6.1 ms • Undervoltage Lockout • Maximum Standby

文件：737.15 Kbytes 页数：28 Pages

TI

德州仪器

丝印：2024Q1；Package：SOIC；POWER-DISTRIBUTION SWITCHES

1FEATURES • Qualified for Automotive Applications • 33-mΩ (5-V Input) High-Side MOSFET Switch • Short-Circuit and Thermal Protection • Overcurrent Logic Output • Operating Range: 2.7 V to 5.5 V • Logic-Level Enable Input • Typical Rise Time: 6.1 ms • Undervoltage Lockout • Maximum Standby

文件：737.15 Kbytes 页数：28 Pages

TI

德州仪器

丝印：2024Q1；Package：SOIC；POWER-DISTRIBUTION SWITCHES

1FEATURES • Qualified for Automotive Applications • 33-mΩ (5-V Input) High-Side MOSFET Switch • Short-Circuit and Thermal Protection • Overcurrent Logic Output • Operating Range: 2.7 V to 5.5 V • Logic-Level Enable Input • Typical Rise Time: 6.1 ms • Undervoltage Lockout • Maximum Standby

文件：737.15 Kbytes 页数：28 Pages

TI

德州仪器

丝印：2024Q1；Package：SOIC；POWER-DISTRIBUTION SWITCHES

1FEATURES • Qualified for Automotive Applications • 33-mΩ (5-V Input) High-Side MOSFET Switch • Short-Circuit and Thermal Protection • Overcurrent Logic Output • Operating Range: 2.7 V to 5.5 V • Logic-Level Enable Input • Typical Rise Time: 6.1 ms • Undervoltage Lockout • Maximum Standby

文件：737.15 Kbytes 页数：28 Pages

TI

德州仪器

丝印：2024IVZ；Package：8LdTSSOP；Real-Time Clock/Calendar with Embedded Unique ID

文件：1.01865 Mbytes 页数：25 Pages

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