2N2907AU

Marking：20；Package：SOT-323；General Purpose Transistor

GeneralPurposeTransistor PNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSC-323/SC−70packagewhichisdesignedforlowpowersurfacemountapplications. Features •WedeclarethatthematerialofproductcompliancewithRoHSrequ

3.0SMC20

Marking：20；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

AZ4020-01F.R7G

Marking：20；Package：DFN2020P2E；Transient Voltage Suppressing Device For ESD/Transient/Surge Protection

Features
ESDProtectfor1LinewithUnidirectional.
ProvideESDprotectionforalineto IEC61000-4-2(ESD)±30kV(air/contact), IEC61000-4-5(Lightning)58A(8/20μs)
Suitablefor,20Vandbelow,operatingvoltage applications
UltraSmallpackagesavesboardspace
Protectone

BA178M20CP

Marking：20；Package：178M20CP；Three-Terminal Regulator

STRUTURE:SiliconMonolithicIntergratedCircuit TYPE:Three-TerminalRegulator FEATURES:Outputcurrentupto0.5A

CMZ20A

Marking：20；Package：3-4E1S；Zener Diode Silicon Epitaxial Planar

Applications •Surgeabsorber Features (1)Powerdissipation:PD=2W (2)Zenervoltage:Vz=12to51V (3)Theuseofsmall,thinsurface-mountpackageisoptimumwayforhigh-densitymounting. Nickname:M-FLATTM

D20V0H1U2LP-7B

Marking：20；Package：X1-DFN1006-2；20V UNIDIRECTIONAL TVS DIODE

Features •LowProfilePackage(0.53mmMax)andUltra-SmallPCBFootprintArea(1.08mm×0.68mmMax)SuitableforCompactPortableElectronics •ProvidesESDProtectionperIEC61000-4-2Standard:Air±30kV,Contact±30kV •OneChannelofESDProtection •LowChannelInputCapacitance •Total

IP4220CZ6

Marking：20；Package：SOT457；Dual USB 2.0 integrated ESD protection

1.1Generaldescription TheIP4220CZ6isdesignedtoprotectI/Olinessensitivetocapacitiveload,suchas USB2.0,ethernet,DigitalVideoInterface(DVI)andsoon,fromdamagedueto ElectroStaticDischarge(ESD).Itincorporatesfourpairsofultralowcapacitancerail-to-rail ESDprotec

LMBT2907AWT1G

Marking：20；Package：SC70；General Purpose Transistors PNP Silicon

FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable.

LMBT2907AWT3G

Marking：20；Package：SC70；General Purpose Transistors PNP Silicon

FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable.

LZ52C20W

Marking：20；Package：1206；SURFACE MOUNT ZENER DIODE

FEATURES •Forsurfacemountedapplication •Siliconepitaxialplanardiode •Ultrasmallsurfacemountpackage •Lowleakagecurrent •2tolerancedeviceofVz •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3)