MM3Z39

Marking：20；Package：SOD-323FL；0.3W SILICON PLANAR ZENER DIODES

FEATURES Totalpowerdissipation:max.300mW Smallplasticpackagesuitableforsurfacemounteddesign Toleranceapproximately±5% Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC

PDTC144WT

Marking：20；Package：SOT23；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver. DESCRIPTION NPNresistor-equippedtransistor(see“Simplif

PDTC144WT

Marking：20；Package：SOT23；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PDTC144WT-Q

Marking：20；Package：SOT23；50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23Surface-MountedDevice(SMD)plastic package. PNPcomplement:PDTA144WT-Q 2.Featuresandbenefits •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts

PDTC144WU

Marking：20；Package：SOT323；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PDTC144WU

Marking：20；Package：SC-70；50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inaverysmallSOT323(SC-70)Surface-Mounted Device(SMD)plasticpackage. PNPcomplement:PDTA144WU 2.Featuresandbenefits •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickand

PDTC144WU

Marking：20；Package：SOT323；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver. DESCRIPTION NPNresistor-equippedtransistor(see“Simplif

PJQ1820U-20V_R1_00201

Marking：20；Package：DFN1010B-6L；20V N-Channel Enhancement Mode MOSFET

Features ●AdvancedTrenchProcessTechnology ●ESDProtected ●LowGateCharge ●FastSwitching ●LeadfreeincompliancewithEURoHS2.0 ●GreenmoldingcompoundasperIEC61249standard

RB520S30

Marking：20；Package：SOD-523；SURFACE MOUNT SCHOTTKY DIODES

FEATURES ExtremelyHighSwitchingSpeed Surfacemountpackageideallysuitedforautmaticinsertion LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

RB521S30FN2

Marking：20；Package：DFN1006-2L；Surface Mount Schottky Diodes

Features Extremelyhighswitchingspeed Surfacemountpackageideallysuitedforautmaticinsertion LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard