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BQ2002GSN

丝印:2002G;Package:SOIC;NiCd/NiMH Fast-Charge Management ICs

Features  Fast charge of nickel cadmium or nickel-metal hydride batteries  Direct LED output displays charge status  Fast-charge termination by -V, maximum voltage, maximum temperature, and maximum time  Internal band-gap voltage reference  Optional top-off charge  Selectable pul

文件:394.41 Kbytes 页数:19 Pages

TI

德州仪器

BQ2002GSN.B

丝印:2002G;Package:SOIC;NiCd/NiMH Fast-Charge Management ICs

Features  Fast charge of nickel cadmium or nickel-metal hydride batteries  Direct LED output displays charge status  Fast-charge termination by -V, maximum voltage, maximum temperature, and maximum time  Internal band-gap voltage reference  Optional top-off charge  Selectable pul

文件:394.41 Kbytes 页数:19 Pages

TI

德州仪器

BQ2002GSNTR

丝印:2002G;Package:SOIC;NiCd/NiMH Fast-Charge Management ICs

Features  Fast charge of nickel cadmium or nickel-metal hydride batteries  Direct LED output displays charge status  Fast-charge termination by -V, maximum voltage, maximum temperature, and maximum time  Internal band-gap voltage reference  Optional top-off charge  Selectable pul

文件:394.41 Kbytes 页数:19 Pages

TI

德州仪器

BQ2002GSNTR.B

丝印:2002G;Package:SOIC;NiCd/NiMH Fast-Charge Management ICs

Features  Fast charge of nickel cadmium or nickel-metal hydride batteries  Direct LED output displays charge status  Fast-charge termination by -V, maximum voltage, maximum temperature, and maximum time  Internal band-gap voltage reference  Optional top-off charge  Selectable pul

文件:394.41 Kbytes 页数:19 Pages

TI

德州仪器

2002GB2A1NCG8

Temperature Sensor with Integrated EEPROM for Memory Integrated EEPROM for Memory

Features • Temperature Sensor + 256 Byte Serial EEPROM • 256 Byte Serial EEPROM for SPD • Single Supply: 2.3V to 3.6V • Accurate timeout support - Meets strict SMBus spec of 25ms (min), 35ms (max) • Timeout supported for Temp Sensor and EEPROM • Timeout supported in all Modes – Active mode

文件:540.18 Kbytes 页数:31 Pages

RENESAS

瑞萨

2002GB2A1NRG8

Temperature Sensor with Integrated EEPROM for Memory Integrated EEPROM for Memory

Features • Temperature Sensor + 256 Byte Serial EEPROM • 256 Byte Serial EEPROM for SPD • Single Supply: 2.3V to 3.6V • Accurate timeout support - Meets strict SMBus spec of 25ms (min), 35ms (max) • Timeout supported for Temp Sensor and EEPROM • Timeout supported in all Modes – Active mode

文件:540.18 Kbytes 页数:31 Pages

RENESAS

瑞萨

详细参数

  • 型号:

    2002G

  • 功能描述:

    电池管理 NiCd/NiMH Gating Charge Mngmnt IC

  • RoHS:

  • 制造商:

    Texas Instruments

  • 电池类型:

    Li-Ion

  • 输出电压:

    5 V

  • 输出电流:

    4.5 A

  • 工作电源电压:

    3.9 V to 17 V

  • 最大工作温度:

    + 85 C

  • 最小工作温度:

    - 40 C

  • 封装/箱体:

    VQFN-24

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
TI
23+
8-SOIC
16000
TI现货商!原装正品!
询价
TI/德州仪器
2021+
SOIC-8
8630
原厂渠道,公司原装现货
询价
TI(德州仪器)
2022+原装正品
SOIC-8
18000
支持工厂BOM表配单 公司只做原装正品货
询价
TI(德州仪器)
24+
SOP-8
959
深耕行业12年,可提供技术支持。
询价
TI
2025+
8-SOIC
32560
原装优势绝对有货
询价
TI
24+
SOP-8
5
询价
TI
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
TI
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
TI(德州仪器)
18+
9800
代理进口原装/实单价格可谈
询价
TI
24+
8-SOIC
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
询价
更多2002G供应商 更新时间2025-9-20 15:09:00