丝印：1Z；Package：SOD-323；Surface Mount Zener Diodes

Features ◇ Wide zener voltage range selection:2.4V to 75V . ◇ VZ Tolerance selection of ±2(B series). ◇ Ideally suited for automated assembly processes. ◇ Moisture sensitivity level 1. Applications ◇ Zener diode. ◇ Ultra-small surface mount package.

文件：1.63879 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：1Z；Package：SOD523；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an SOD523 (SC-79) ultra small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8

文件：221.41 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1Z；Package：SOD523；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an SOD523 (SC-79) ultra small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8

文件：222.33 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1Z；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 200mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：537.22 Kbytes 页数：3 Pages

YFWDIODE

佑风微电子

丝印：1Z；Package：SOT-23；High Voltage Transistor(NPN Silicon)

High Voltage Transistor NPN Silicon

文件：99.57 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：1Z；Package：SC-62；80 V, 4 A PNP low VCEsat (BISS) transistor

FEATURES •High hFE and low VCEsat at high current operation •High collector current IC: 4 A •High efficiency leading to less heat generation. APPLICATIONS •Medium power peripheral drivers (e.g. fans and motors) •Strobe flash units for digital still cameras and mobile phones •Inverter appl

文件：448.98 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1Z；Package：SOT1118；20 V, dual P-channel Trench MOSFET

1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology

文件：1.63266 Mbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1Z；Package：SOD-323FL；Zener Diodes

文件：262.079 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1ZXYY；Package：TDFN33-14；1A Linear Li-Ion Battery Charger for Single and Dual Cell Applications

Features • 4.0V ~ 13.2V Input Voltage Range • Compatible with USB or AC Adapter Sources • Programmable Fast Charge Current from 100mA to 1A • Programmable Charge Termination Current • Digital Thermal Loop Charge Reduction • Less Than 0.4μA Battery Leakage Current • Programming Charge Timer

文件：905.58 Kbytes 页数：23 Pages

SKYWORKS

思佳讯

丝印：1Z1；Package：SOT323；PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features - Epitaxial Planar Die Construction - Built-In Biasing Resistors - Surface Mount Package Suited for Automated Assembly - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability

文件：401.1 Kbytes 页数：7 Pages

DIODES

美台半导体