DIODE SILCON EPITAXIAL PLANAR TYPE

TCXO/VCO • High capacitance ratio: C1 V/C4 V = 4.3 (typ.) • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner.

文件：109.67 Kbytes 页数：2 Pages

TOSHIBA

东芝

Silicon Epitaxial Planar Diode

Features ● High Capacitance Ratio:C1V/C4V=4.3(Typ.) ● Low Series Resistance:rs=0.4 (Typ.) ● Useful for Small Size Tuner

文件：32.63 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon Epitaxial Planar Diode

Features ● High Capacitance Ratio:C1V/C4V=4.3(Typ.) ● Low Series Resistance:rs=0.4 (Typ.) ● Useful for Small Size Tuner

文件：43.54 Kbytes 页数：1 Pages

ZHAOXINGWEI

TCXO/VCO

文件：176 Kbytes 页数：3 Pages

TOSHIBA

东芝

Variable capacitance diode for electronic tuning applications

Application Scope：VCXO\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Reverse Voltage VR 10 V ;

Toshiba

东芝

TOSHIBA Diode Silicon Epitaxial Planar Type

TCXO/VCO • High capacitance ratio: C1V / C4V = 4.3 (typ.) • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner.

文件：143.77 Kbytes 页数：3 Pages

TOSHIBA

东芝

TCXO/VCO

文件：176 Kbytes 页数：3 Pages

TOSHIBA

东芝

Package：SC-76，SOD-323；包装：托盘 类别：分立半导体产品 二极管 - 可变电容（变容器，可变电抗器） 描述：DIODE TCXO/VCO 10V USC

Toshiba Semiconductor and Storage