Schottky Barrier Diode Silicon Epitaxial

Features (1) Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ.) Applications • High-Speed Switching

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TOSHIBA

东芝

Small-signal Schottky barrier diode

Feature：High-speed switching / Low leakage current\nInternal Connection：Single\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Average Forward Current IO 0.05 A \nReverse Voltage VR 20 V ;

Toshiba

东芝

Package：SOD-882；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 20V 50MA SOD882

Toshiba Semiconductor and Storage

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application

文件：134.84 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

High Speed Switching Application

Schottky Barrier Diode Silicon Epitaxial Applications • High-Speed Switching

文件：175.22 Kbytes 页数：3 Pages

TOSHIBA

东芝