1SS392

DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

HighSpeedSwitchingApplication ●Lowforwardvoltage:VF(3)=0.54V(typ.) ●Lowreversecurrent:IR=5μA(max) ●Smallpackage:SC-59

1SS392

LOW VOLTAGE HIGH SPEED SWITCHING

LOWVOLTAGEHIGHSPEEDSWITCHING Features Smallpackage Lowforwardvoltage:VF=0.54V(Typ). Lowreversecurrent:IR=5µA(Max).

1SS392

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

Forlowvoltagehighspeedswitchingapplication Features •Lowforwardvoltage •Lowreversecurrent

1SS392

High Speed Switching Application

1SS392_14

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

HighSpeedSwitchingApplication ●Lowforwardvoltage:VF(3)=0.54V(typ.) ●Lowreversecurrent:IR=5μA(max) ●Smallpackage:SC-59

1SS392_07

High Speed Switching Application

1SS392,LF

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 40V SC59

Toshiba Semiconductor and Storage