TOSHIBA Diode Silicon Epitaxial Planar Type

Switching Diodes Silicon Epitaxial Planar Features (1) Small package (2) Low forward voltage: VF(3) = 0.98 V (typ.) (3) Fast reverse recovery time: trr= 1.6 ns (typ.) (4) Small total capacitance: Ct = 0.5 pF (typ.) Applications • Ultra-High-Speed Switching

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TOSHIBA

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Switching Diodes Silicon Epitaxial Planar

1. Applications • Ultra-High-Speed Switching 2. Features (1) Small package (2) Low forward voltage: VF(3) = 0.98 V (typ.) (3) Fast reverse recovery time: trr = 1.6 ns (typ.) (4) Small total capacitance: Ct = 0.5 pF (typ.)

文件：199.75 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Diodes Silicon Epitaxial Planar

1. Applications • Ultra-High-Speed Switching 2. Features (1) Small package (2) Low forward voltage: VF(3) = 0.98 V (typ.) (3) Fast reverse recovery time: trr = 1.6 ns (typ.) (4) Small total capacitance: Ct = 0.5 pF (typ.)

文件：199.75 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Diodes Silicon Epitaxial Planar

1. Applications • Ultra-High-Speed Switching 2. Features (1) Small package (2) Low forward voltage: VF(3) = 0.98 V (typ.) (3) Fast reverse recovery time: trr = 1.6 ns (typ.) (4) Small total capacitance: Ct = 0.5 pF (typ.)

文件：199.75 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching diode

Feature：High-speed switching\nInternal Connection：Single\nNumber of Circuits：1\nAssembly bases：日本 / 泰国\nRoHS Compatible Product(s) (#)：Available Average Forward Current IO 0.1 A \nReverse Voltage VR 80 V ;

Toshiba

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Package：SOD-882；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 80V 100MA CST2

Toshiba Semiconductor and Storage