SCHOTTKY BARRIER DIODE

FEATURES • Low Forward Voltage • Fast Reverse Recovery Time • High Forward Current APPLICATIONS • High Speed Switching

文件：245.82 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

SCHOTTKY BARRIER DIODE

SCHOTTKY BARRIER DIODE FEATURES • Low Forward Voltage • Fast Reverse Recovery Time • High Forward Current APPLICATIONS • High Speed Switching

文件：1.35289 Mbytes 页数：4 Pages

JIANGSU

长电科技

ULTRA HIGH SPEED SWITCHING APPLICATION

Features • Low forward voltage: VF(3) = 0.50V(Typ). • Fast reverse recovery time: trr = 20ns(Typ). • High average forward current: IO = 0.5A(Max).

文件：35.38 Kbytes 页数：1 Pages

KEXIN

科信电子

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Forward Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：94.33 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

Surface Mount Schottky Planar Diode

Features ♦ Fast reverse recovery time:trr=20ns(typ). ♦ Low forward voltage:VF=0.50V (typ). ♦ High average forward current:IO=0.5A(max.) Applications ♦ Ultra high speed switching application.

文件：243.11 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

Ultra High Speed Switching Application • Low forward voltage : VF (3) = 0.50V (typ.) • Fast reverse recovery time : trr = 20ns (typ.) • High average forward current : IO = 0.5A (max)

文件：113.18 Kbytes 页数：2 Pages

TOSHIBA

东芝

Surface mount schottky planar diode

文件：229.95 Kbytes 页数：3 Pages

DSK

SOT-23 Plastic-Encapsulate Diodes

文件：1.98894 Mbytes 页数：4 Pages

HDSEMI

海德半导体

Switching Diodes

文件：526.69 Kbytes 页数：1 Pages

ZHAOXINGWEI

Ultra High Speed Switching Application

文件：182.74 Kbytes 页数：3 Pages

TOSHIBA

东芝