Silicon Epitaxial Planar Type

ULTRA HIGH SPEED SWITCHING APPLICATIONS. FEATURES: • Low Forward Voltage : Vf = 1.0V (Max.) • Small Total Capacitance : Ct = 2pF (Max.) • Fast Reverse Recovery Time : Trr = 2ns (Max.)

文件：405.25 Kbytes 页数：4 Pages

TOSHIBA

东芝

HIGH SPEED SWITCHING DIODE

FEATURES : • High switching speed: max. 2 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max. 55 V • Pb / RoHS Free

文件：25.71 Kbytes 页数：1 Pages

SYNSEMI

HIGH SPEED SWITCHING DIODE

文件：27.84 Kbytes 页数：1 Pages

EIC

Switching Diodes

分立

EIC

灿阳

Diodes Switching

分立

SynSemi