1PS10SB82,315肖特基二极管资料datasheet下载-114ic电子网

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
1PS10SB82	文件：52.5 Kbytes Page：7 Pages	Schottkybarrierdiode	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
1PS10SB82	文件：99.28 Kbytes Page：7 Pages	Schottkybarrierdiode DESCRIPTION AnepitaxialSchottkybarrierdiodeencapsulatedinaSOD882leadlessultrasmallplasticpackage. ESDsensitivedevice,observehandlingprecautions. FEATURES •Lowforwardvoltage •Lowdiodecapacitance •Leadlessultrasmallplasticpackage (1.0mm×0.6mm×0.5mm	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
1PS10SB82	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
1PS10SB82	文件：177.3 Kbytes Page：8 Pages	Schottkybarrierdiode 1.Generaldescription AnepitaxialSchottkybarrierdiodeencapsulatedinaSOD882leadlessultrasmallplasticpackage. ESDsensitivedevice,observehandlingprecautions. 2.Featuresandbenefits •Lowforwardvoltage •Lowdiodecapacitance •Leadlessultrasmallplasticpackage(1.0m	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA

更多1PS10SB82,315肖特基二极管供应商更新时间2024-5-25 16:00:00