GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

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ETCList of Unclassifed Manufacturers

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1.2 Amps, 700 Volts N-CHANNEL MOSFET

■ DESCRIPTION The UTC 1N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in p

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1.2 Amps, 700 Volts N-CHANNEL MOSFET

■ DESCRIPTION The UTC 1N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in p

文件：217.42 Kbytes 页数：8 Pages

UTC

友顺

1.2 Amps, 700 Volts N-CHANNEL MOSFET

■ DESCRIPTION The UTC 1N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in p

文件：217.42 Kbytes 页数：8 Pages

UTC

友顺

1.2 Amps, 700 Volts N-CHANNEL MOSFET

■ DESCRIPTION The UTC 1N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in p

文件：217.42 Kbytes 页数：8 Pages

UTC

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1.2A, 700V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 1N70Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies

文件：310.46 Kbytes 页数：7 Pages

UTC

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1.2A, 700V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 1N70Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies

文件：310.46 Kbytes 页数：7 Pages

UTC

友顺

1.2A, 700V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 1N70Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies

文件：310.46 Kbytes 页数：7 Pages

UTC

友顺

1.2A, 700V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 1N70Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies

文件：310.46 Kbytes 页数：7 Pages

UTC

友顺

1.2A, 700V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 1N70Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies

文件：310.46 Kbytes 页数：7 Pages

UTC

友顺