1.0A, 600V  N-CHANNEL  POWER MOSFET

The UTC  1N60Q-TA is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, RDS(ON) < 7.2Ω @ VGS=10V, ID=0.5AFast switching capabilityAvalanche energy specifiedImproved dv/dt capability, high ruggedness;

UTC

友顺

POINT CONTACT GERMANIUM DIODE

Point Contact Germanium Diodes 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc.

文件：88.26 Kbytes 页数：2 Pages

SEMTECH

先之科

POINT CONTACT GERMANIUM DIODES

POINT CONTACT GERMANIUM DIODES 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc.

文件：141.89 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

400 mW low voltage avalanche low noise silicon zener diodes

文件：94.49 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司