Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold

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Microsemi

美高森美

0.5 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in powe

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UTC

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GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

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ETCList of Unclassifed Manufacturers

未分类制造商

Drain Current ID= 1.0A@ TC=25C

• FEATURES • Drain Current ID= 1.0A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 12Ω(Max) • Fast Switching • APPLICATIONS • Switching applications in power supplies • Motor controls,high efficient DC to DC converters

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ISC

无锡固电

1A 600V N-channel enhanced field effect transistor

文件：788.99 Kbytes 页数：5 Pages

YFWDIODE

佑风微

0.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：224.57 Kbytes 页数：8 Pages

UTC

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0.5A, 600V N-CHANNEL POWER MOSFET

文件：218.61 Kbytes 页数：8 Pages

UTC

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0.5 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：224.57 Kbytes 页数：8 Pages

UTC

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0.5A, 600V N-CHANNEL POWER MOSFET

文件：218.61 Kbytes 页数：8 Pages

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N-CHANNEL POWER MOSFET

文件：240.68 Kbytes 页数：7 Pages

UTC

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