丝印：1N6；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR5BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.36844 Mbytes 页数：16 Pages

TOSHIBA

东芝

丝印：1N6；Package：SC70；TSV91xA-Q1 Automotive Rail-to-Rail Input or Output, 8-MHz Operational Amplifiers

1 Features • Rail-to-rail input and output • Low noise: 18 nV/√Hz at 1 kHz • Low power consumption: 550 μA (typical) • High-gain bandwidth: 8 MHz • Operating supply voltage from 2.5 V to 5.5 V • Low input bias current: 1 pA (typical) • Low input offset voltage: 1.5 mV (maximum) • Low offse

文件：2.78811 Mbytes 页数：45 Pages

TI

德州仪器

丝印：1N6；Package：SC70；TSV91xA-Q1 Automotive Rail-to-Rail Input or Output, 8-MHz Operational Amplifiers

1 Features • Rail-to-rail input and output • Low noise: 18 nV/√Hz at 1 kHz • Low power consumption: 550 μA (typical) • High-gain bandwidth: 8 MHz • Operating supply voltage from 2.5 V to 5.5 V • Low input bias current: 1 pA (typical) • Low input offset voltage: 1.5 mV (maximum) • Low offse

文件：2.29239 Mbytes 页数：39 Pages

TI

德州仪器

丝印：1N6；Package：SC70；TSV91xA-Q1 Automotive Rail-to-Rail Input or Output, 8-MHz Operational Amplifiers

1 Features • Rail-to-rail input and output • Low noise: 18 nV/√Hz at 1 kHz • Low power consumption: 550 μA (typical) • High-gain bandwidth: 8 MHz • Operating supply voltage from 2.5 V to 5.5 V • Low input bias current: 1 pA (typical) • Low input offset voltage: 1.5 mV (maximum) • Low offse

文件：2.47565 Mbytes 页数：42 Pages

TI

德州仪器

丝印：1N6836HVGT；Package：DO-590；Ultra-Fast Recovery High Voltage Silicon Rectifying Diode

Introduce: HVGT high voltage silicon rectifier diodes is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. Features: High reliability design. GPP chip. Hig

文件：568.86 Kbytes 页数：2 Pages

GETEDZGETAI ELECTRONICS DEVICE CO., LTD

格特电子广州市格特电子有限公司

丝印：1N60KR；Package：SOT-223；MOSFET

Features - Low reverse transfer capacitances. - ESD improved capability. - Fast switching. - Low gate charge.

文件：648.86 Kbytes 页数：7 Pages

COMCHIP

典琦

丝印：1N6513HVGT；Package：DO-590；Ultra-Fast Recovery High Voltage Silicon Rectifying Diode

文件：569.35 Kbytes 页数：2 Pages

GETEDZGETAI ELECTRONICS DEVICE CO., LTD

格特电子广州市格特电子有限公司

丝印：1N6515HVGT；Package：DO-590；Ultra-Fast Recovery High Voltage Silicon Rectifying Diode

文件：569.11 Kbytes 页数：2 Pages

GETEDZGETAI ELECTRONICS DEVICE CO., LTD

格特电子广州市格特电子有限公司

丝印：1N6517HVGT；Package：DO-590；Ultra-Fast Recovery High Voltage Silicon Rectifying Diode

文件：568.96 Kbytes 页数：2 Pages

GETEDZGETAI ELECTRONICS DEVICE CO., LTD

格特电子广州市格特电子有限公司

丝印：1N6519HVGT；Package：DO-590；Ultra-Fast Recovery High Voltage Silicon Rectifying Diode

文件：569.23 Kbytes 页数：2 Pages

GETEDZGETAI ELECTRONICS DEVICE CO., LTD

格特电子广州市格特电子有限公司