丝印：1NU；Package：X2QFN；INA351 Cost and Size Optimized, Low Power, 1.8-V to 5.5-V Selectable Gain Instrumentation Amplifier with Integrated Reference Buffer

1 Features • Designed for size, cost, and power conscious applications • Selectable gain options with integrated reference buffer – G = 10 or G = 20 (INA351ABS) – G = 30 or G = 50 (INA351CDS) • Space saving ultra-small package options – 10-pin X2QFN (RUG) – 3 mm2 – 8-pin WSON (DSG) – 4 mm

文件：3.1575 Mbytes 页数：41 Pages

TI

德州仪器

丝印：1NU；Package：X2QFN；INA351 Cost and Size Optimized, Low Power, 1.8V to 5.5V Selectable Gain Instrumentation Amplifier with Integrated Reference Buffer

1 Features • Designed for size, cost, and power conscious applications • Selectable gain options with integrated reference buffer – G = 10 or G = 20 (INA351ABS) – G = 30 or G = 50 (INA351CDS) • Space saving ultra-small package options – 10-pin X2QFN (RUG) – 3mm2 – 8-pin WSON (DSG) – 4mm2

文件：3.32397 Mbytes 页数：46 Pages

TI

德州仪器

丝印：1NU；Package：X2QFN(RUG)；INA351 Cost and Size Optimized, Low Power, 1.8V to 5.5V Selectable Gain Instrumentation Amplifier with Integrated Reference Buffer

1 Features • Designed for size, cost, and power conscious applications • Selectable gain options with integrated reference buffer – G = 10 or G = 20 (INA351ABS) – G = 30 or G = 50 (INA351CDS) • Space saving ultra-small package options – 10-pin X2QFN (RUG) – 3mm2 – 8-pin WSON (DSG) – 4mm2

文件：3.36724 Mbytes 页数：48 Pages

TI

德州仪器

丝印：1NU；Package：X2QFN(RUG)；INA351 Cost and Size Optimized, Low Power, 1.8V to 5.5V Selectable Gain Instrumentation Amplifier with Integrated Reference Buffer

1 Features • Designed for size, cost, and power conscious applications • Selectable gain options with integrated reference buffer – G = 10 or G = 20 (INA351ABS) – G = 30 or G = 50 (INA351CDS) • Space saving ultra-small package options – 10-pin X2QFN (RUG) – 3mm2 – 8-pin WSON (DSG) – 4mm2

文件：3.36724 Mbytes 页数：48 Pages

TI

德州仪器

1500W Bipolar Transient Voltage Suppressor Surface Mount (US)

Description Quick reference data VBR MIN = 6.12 -180V VRWM = 5.2 - 152V VC (max) = 11 - 273V I(BR) 1N6138 - 1N6173 = 5mA - 175mA Features ◆ Low dynamic impedance ◆ Hermetically sealed non-cavity construction ◆ 1500 watt peak pulse power ◆ 7.5W continuous

文件：119.7 Kbytes 页数：4 Pages

SEMTECH

先之科

SWITCHING TYPE POWER SUPPLY APPLICATIONS

文件：5.26421 Mbytes 页数：2 Pages

TAYCHIPST

泰迪斯电子

SUPER FAST RECOVERY (SWITCHING TYPE POWER SUPPLY APLICATIONS)

文件：153.74 Kbytes 页数：2 Pages

TOSHIBA

东芝