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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
1N5821-G	文件：69.39 Kbytes Page：2 Pages	Schottky Barrier Rectifier ForwardCurrent:3.0AReverseVoltage:20to40V RoHSDevice Features -Fastswitching. -Lowforwardvoltage,highcurrentcapability. -Lowpowerloss,highefficiency. -Highcurrentsurgecapability. -Hightemperaturesolderingguaranteed:250°C/10seconds,0.375”(9.5mm)leadlengtha	COMCHIPComchip Technology 典琦典琦科技股份有限公司	COMCHIP
1N5821H	文件：54.42 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIERS VOLTAGE20to40VoltsCURRENT3.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Foruseinlowvoltage,highfrequenc	PANJITPan Jit International Inc. 強茂強茂股份有限公司	PANJIT
1N5821H	文件：172.39 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40Volts ForwardCurrent-3.0Amperes FEATURES Halogen-freetype Metalsiliconjunction,majoritycarrierconduction Guardringforovervoltageprotection Lowpowerloss,highefficiency,Highsurgecapability *Highcurrentcapability,lowfo	ZOWIEZowie Technology Corporation 智威智威科技股份有限公司	ZOWIE
1N5821-LFR	文件：120.26 Kbytes Page：2 Pages	3ASCHOTTKYBARRIERRECTIFIERS FEATURES ●EXTREMELYLOWVF ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LOWPOWERLOSS/HIGHEFFICIENCY ●LEADFREE	FRONTIER Frontier Electronics	FRONTIER
1N5821M	文件：127.51 Kbytes Page：2 Pages	SchottkyBarrierRectifiers	MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司	MOSPEC
1N5821RL	文件：97 Kbytes Page：8 Pages	AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
1N5821RL	文件：243.87 Kbytes Page：9 Pages	AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
1N5821RLG	文件：243.87 Kbytes Page：9 Pages	AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
1N5821RLG	文件：97 Kbytes Page：8 Pages	AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow-volt	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
1N5821S	文件：28.16 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIERDIODES FEATURES: Highcurrentcapability Highsurgecurrentcapability Highreliability Highefficiency Lowpowerloss Lowcost Lowforwardvoltagedrop Pb/RoHSFree	EIC EIC discrete Semiconductors	EIC

供应商	型号	品牌	批号	封装	库存	备注	价格
现代芯城（深圳）科技有限公司	1N5821H		24+	N/A	56000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市宏捷佳电子科技有限公司	1N5821H	Taiwan Semiconductor Corporati	25+	DO-201AD	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市科雨电子有限公司	1N5821HA0G	TAIWAN	1809+	DO-201	6675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市达恩科技有限公司	1N5821R0	TaiwanSemiconductor	24+	NA	3000	进口原装正品优势供应	询价
深圳市鹏顺微电子科技有限公司	1N5821R0	Taiwan Semiconductor	2022+	原厂原包装	6800	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市一线半导体有限公司	1N5821RL	ON	24+		1017		询价
齐创科技(上海,北京,青岛)有限公司	1N5821RL	ON	23+	DO201AD	5000	原装正品,假一罚十	询价
深圳市豪迈兴电子有限公司	1N5821RL	ON	24+	DO201AD	5323	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市鼎盛源芯科技有限公司	1N5821RL	ON	16+	原厂封装	10000	全新原装正品,代理优势渠道供应,欢迎来电咨询	询价
深圳市华斯顿科技有限公司	1N5821RL	ON	25+23+	DO201AD	18084	绝对原装正品全新进口深圳现货	询价

更多1N5821-G供应商更新时间2025-7-23 11:06:00

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