1N5820数据手册分立半导体产品的二极管-整流器-单规格书PDF

描述 Description

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.

特性 Features

• Extremely Low vF
• Low Power Loss/High Efficiency
• Low Stored Charge, Majority Carrier ConductionMechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds
• Shipped in plastic bags, 5,000 per bag
• Available Tape and Reeled, 1500 per reel, by adding a \"RL'' suffix to the part number
• Polarity: Cathode indicated by Polarity Band
• Marking: 1N5820, 1N5821, 1N5822
• Pb-Free Packages are Available

简介

1N5820属于分立半导体产品的二极管-整流器-单。由制造生产的1N5820二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。