3.0 Ampere Schottky Barrier Rectifiers

Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

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FAIRCHILD

仙童半导体

Axial Lead Rectifiers

Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-volt

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ONSEMI

安森美半导体

Axial Lead Rectifiers

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency

文件：243.87 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Schottky Rectifier, 3.0 A

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in  

文件：80.24 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in  

文件：346.36 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in  

文件：74.75 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of comp

文件：69.27 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

VOLTAGE 20V ~ 40V 3.0AMP Schottky Barrier Rectifiers

FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

文件：119.75 Kbytes 页数：2 Pages

SECOS

喜可士

SCHOTTKY BARRIER RECTIFIER

VOLTAGE: 20 TO 40V CURRENT: 3.0A FEATURES • Epitaxial construction for chip • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed: 250°C/10sec/0.375(9.5mm) lead length at 5 lbs tension

文件：13.77 Kbytes 页数：1 Pages

SSE

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction,majority carrier conduction ♦ Guardring for overvoltage protection ♦ Low power loss,high erriciency ♦ High current

文件：234.99 Kbytes 页数：2 Pages

SY

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