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1N5820M

Schottky Barrier Rectifiers

文件:127.51 Kbytes 页数:2 Pages

MOSPEC

统懋

1N5820RL

Axial Lead Rectifiers

Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-volt

文件:97 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

1N5820RL

Axial Lead Rectifiers

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency

文件:243.87 Kbytes 页数:9 Pages

ONSEMI

安森美半导体

1N5820RLG

Axial Lead Rectifiers

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency

文件:243.87 Kbytes 页数:9 Pages

ONSEMI

安森美半导体

1N5820RLG

Axial Lead Rectifiers

Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-volt

文件:97 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

1N5820S

SCHOTTKY BARRIER RECTIFIER DIODES

FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low cost * Low forward voltage drop * Pb / RoHS Free

文件:28.16 Kbytes 页数:2 Pages

EIC

1N5820-T3

3.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

文件:36.84 Kbytes 页数:3 Pages

WTE

Won-Top Electronics

1N5820-TB

3.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

文件:36.84 Kbytes 页数:3 Pages

WTE

Won-Top Electronics

1N5820THRU1N5822

SCHOTTKY BARRIER RECTIFIER

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal sliicon junction ,majority carriet conduction • Guard ring for overcoltage protection • Low power loss,high efficiency • High current capability ,Low forward voltage drop • High surge capability

文件:169.09 Kbytes 页数:2 Pages

CHENYI

商朗电子

1N5820-TP

3 Amp Schottky Barrier Rectifier 20 - 40 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Low Forward Voltage Drop and High Current Capability • High Surge Current Capability • Epoxy meets UL 94 V-0

文件:489.35 Kbytes 页数:4 Pages

MCC

产品属性

  • 产品编号:

    1N5820

  • 制造商:

    Microchip Technology

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    散装

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io):

    3A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 安装类型:

    通孔

  • 封装/外壳:

    B,轴向

  • 供应商器件封装:

    B,轴向

  • 工作温度 - 结:

    -65°C ~ 125°C

  • 描述:

    DIODE SMALL-SIGNAL SCHOTTKY

供应商型号品牌批号封装库存备注价格
25+
420
公司现货库存
询价
25+
420
公司现货库存
询价
MICREL/麦瑞
25+
原装
32360
MICREL/麦瑞全新特价1N5820即刻询购立享优惠#长期有货
询价
光宝
24+
DO-201AD
2500
进口原装现货/假一赔十
询价
扬杰
25+
DO-201AD
10000
扬杰原厂一级代理商,价格优势!
询价
ONSEMI
25+
N/A
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
HYGROUP台产
24+
DO-27
50000
询价
SeCoS
13+
2786
原装分销
询价
ON
23+
DO201AD
5000
原装正品,假一罚十
询价
PJ
25+
DO-201
38400
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多1N5820供应商 更新时间2026-1-21 17:44:00