Axial Lead Rectifiers

Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−volt

文件：75.98 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency

文件：249.43 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Package：DO-204AL，DO-41，轴向；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 1A AXIAL

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appli

文件：52.22 Kbytes 页数：2 Pages

BILIN

银河微电

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere FEATURES ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Metal silicon junction,majority carrier conduction ◆ Guardring for overvoltage protection ◆ Low power loss,high efficiency ◆ High curren

文件：989.93 Kbytes 页数：2 Pages

SY

顺烨电子

1.0AMP. SCHOTTKY BARRIER RECTIFIERS

文件：177.14 Kbytes 页数：1 Pages

CHONGQING

平伟实业