SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444

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MICROSEMI

美高森美

General Purpose Axial Lead Glass Packaged Schottky Diodes

Description and Applications These silicon diodes are packaged in a hermetic axial lead glass package. Various uses include detecting, mixing and switching at low power levels. They are suitable for commercial switching along with control functions in narrow band receivers. These diodes can also

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MA-COM

Pico Second Switching Speed

Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or

文件：264.7 Kbytes 页数：7 Pages

AVAGO

安华高

SMALL SIGNAL SCHOTTKY DIODES

Features ● Metal-to-silicon junction ● High breakdown voltage ● Low turn-on voltage ● Ultrafast switching speed

文件：536.51 Kbytes 页数：3 Pages

SUNMATE

森美特

SMALL SIGNAL SCHOTTKY DIODES

FEATURES ◇ Metal-to-silicon junction ◇ High breakdown voltage ◇ Low turn-on voltage ◇ Ultrafast switching speed ◇ Prmarly intended for high level UHF/VHF detection and pulse applications with broad dynamic range

文件：54.13 Kbytes 页数：3 Pages

BILIN

银河微电

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • Metal-on-silicon junction • High breakdown voltage • Low turn-on voltage • Ultrafast switching speed • Primarily intended for high level UHF/VHF detectionand pulse applications with broad dynamic range • The diode is also available in the MiniMELF case with type designation LL5

文件：58.49 Kbytes 页数：3 Pages

JINANJINGHENG

晶恒集团

Schottky Barrier Diodes for General Purpose Applications

Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or

文件：124.62 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Schottky Diodes

Features ◇ Metal-to-silicon junction ◇ High breakdown voltage ◇ Low turn-on voltage ◇ Ultrafast switching speed ◇ Prmarly intended for high level UHF/VHF detection and pulse applications with broad dynamic range

文件：153.85 Kbytes 页数：3 Pages

LUGUANG

鲁光电子

SCHOTTKY DIODES

SCHOTTKY DIODES • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices.

文件：433.18 Kbytes 页数：3 Pages

DIGITRON

SMALL SINGAL SCHOTTKY DIODES

FEATURES • Metal-on-silicon junction • High breakdown voltage • Low turn-on voltage • Ultrafast switching speed • Primarily intended for high level UHF/VHF detectionand pulse applications with broad dynamic range • The diode is also available in the MiniMELF case with type designation LL5

文件：447.06 Kbytes 页数：3 Pages

GXELECTRONICS

星合电子