1N5366C技术资料参数贸易商微芯科技SS第3页-114ic电子网

首页 >1N5366C>规格书列表

零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
1N5366B	文件：424.92 Kbytes Page：42 Pages	500mWDO-35GlassZenerVoltageRegulatorDiodes 500mWDO-35GlassZenerVoltageRegulatorDiodes GENERALDATAAPPLICABLETOALLSERIESINTHISGROUP500MilliwattHermeticallySealedGlassSiliconZenerDiodes Thisisacompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcap	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司	Motorola
1N5366B	文件：93.38 Kbytes Page：2 Pages	Silicon-Power-Z-Diodes(non-planartechnology) •Maximumpowerdissipation5W •NominalZ-voltage8.7…200V •Plasticcase~DO-201 •Weightapprox.1g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopackseepage1	DiotecDiotec Semiconductor 德欧泰克	Diotec
1N5366B	文件：63.53 Kbytes Page：3 Pages	5WZENERDIODE Features •VoltageRange8.2V-200V •GlassPassivatedJunction •5WSteadyState •HighSurgeCapability •±5VoltageToleranceonNominalVZisStandard •100Tested	DIODESDiodes Incorporated 美台半导体	DIODES
1N5366B	文件：267.56 Kbytes Page：5 Pages	GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE VOLTAGE-11TO200VoltsPower-5.0Watts FEATURES Lowprofilepackage Built-instrainrelief Glasspassivatedjunction Lowinductance TypicalIDlessthan1Aabove13V Hightemperaturesoldering:260/10secondsatterminals PlasticpackagehasUnderwritersLaboratory Flammability	TRSYS Transys Electronics	TRSYS
1N5366B	文件：306.32 Kbytes Page：4 Pages	GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE(VOLTAGE-11to200VoltsPower-5.0Watts) FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIDlessthan1.0µAabove13V •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •	PANJITPan Jit International Inc. 強茂強茂股份有限公司	PANJIT
1N5366B	文件：87.54 Kbytes Page：6 Pages	5WATTZENERREGULATORDIODES3.3-200VOLTS 5-WattSurmetic40SiliconZenerDiodes	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司	Motorola
1N5366B	文件：869.5 Kbytes Page：3 Pages	5WSILICONZENERDIODE VZ:3.3-200Volts PD:5Watts FEATURES: CompleteVoltageRange3.3to200Volts Highpeakreversepowerdissipation Highreliability Lowleakagecurrent	DIOTECH Diotech Company.	DIOTECH
1N5366B	文件：86.79 Kbytes Page：3 Pages	SILICONZENERDIODES VZ:3.3-200Volts PD:5Watts FEATURES: CompleteVoltageRange3.3to200Volts Highpeakreversepowerdissipation Highreliability Lowleakagecurrent *Pb/RoHSFree	EIC EIC discrete Semiconductors	EIC
1N5366B	文件：189.37 Kbytes Page：5 Pages	5.0WZenerDiodes Features •Glasspassivatedjunction •Completevoltagerange3.3to200V •Highpeakreversepowerdissipation •Highreliability •Lowleakagecurrent •RoHSCompliant	TAITRON TAITRON Components Incorporated	TAITRON
1N5366B	文件：277.52 Kbytes Page：5 Pages	ZENERDIODES POWERDISSIPATION:5.0W FEATURES ◇Siliconplanarpowerzenerdiodes ◇Foruseinstabilizingandclippingcurcuitswithhighpowerrating. ◇Standardzenervoltagetoleranceis±10.AddsuffixBfor±5tolerance.otherzenervoltageandtolerancesareavailableuponrequest.	BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司	BILIN

<<<1 234 5 6 >>>

详细参数

型号：
1N5366C
制造商：
Microsemi Corporation
功能描述：
5.0W, VZ = 39V, ? 2% - Tape and Reel
功能描述：
DIODE ZENER 5.0W 39V 2% T-18

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市艾宇欣科技有限公司	1N5366CE3/TR8	Microsemi	1942+	N/A	908	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	1N5366CE3/TR13	MICROSEMI	1809+	T-18	3675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市鹏顺微电子科技有限公司	1N5366C/TR12	Microchip	2022+	原厂原包装	8600	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市创新迹电子有限公司	1N5366CE3/TR8	MICROCHIP	23+		7300	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	1N5366CE3/TR8	MICROCHIP	23+		7300	专注配单,只做原装进口现货	询价
深圳市联世界科技有限公司	1N5367	N/A	24+/25+		79	原装正品现货库存价优	询价
深圳市卓越微芯电子有限公司	1N5367	PJ	2020+	DO-17	7500	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多1N5366C供应商更新时间2025-7-26 10:19:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号