1N5355

5W SILICON PLANAR ZENER DIODES

FEATURES •Lowleakage,lowzenerimpedanceatlowcurrent •Maximumpowerdissipationof5Wisideallysuitedforstabilizedpowersupply,etc. •Hightemperaturesolderingguaranteed:260°C/10secondsatterminals •Standardzenervoltagetoleranceavailableis±20.Suffix“A” in

1N5355

5.0 Watt surmetic 40 silicon zcncr diodes

5-WATTZENERREGULATORDIODES3.3-200VOLTS

1N5355A

SILICON ZENER DIODES

VZ:3.3-200Volts PD:5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent

1N5355A

SILICON ZENER DIODES

VZ:3.3-200Volts PD:5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent

1N5355A

5-WATT ZENER REGULATOR DIODES 3.3-200 VOLTS

5-WATTZENERREGULATORDIODES3.3-200VOLTS

1N5355B

5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS

5-WattSurmetic40SiliconZenerDiodes

1N5355B

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts)

FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIDlessthan1.0µAabove13V •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •

1N5355B

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

VOLTAGE-11TO200VoltsPower-5.0Watts FEATURES Lowprofilepackage Built-instrainrelief Glasspassivatedjunction Lowinductance TypicalIDlessthan1Aabove13V Hightemperaturesoldering:260/10secondsatterminals PlasticpackagehasUnderwritersLaboratory Flammability

1N5355B

5W ZENER DIODE

Features •VoltageRange8.2V-200V •GlassPassivatedJunction •5WSteadyState •HighSurgeCapability •±5VoltageToleranceonNominalVZisStandard •100Tested

1N5355B

Silicon-Power-Z-Diodes (non-planar technology)

•Maximumpowerdissipation5W •NominalZ-voltage8.7…200V •Plasticcase~DO-201 •Weightapprox.1g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopackseepage1