N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 1N50A is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch

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UTC

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Drain Current ID= 1.2A@ TC=25C

•FEATURES •Drain Current ID= 1.2A@ TC=25℃ •Drain Source Voltage- : VDSS= 500V(Min) •Static Drain-Source On-Resistance : RDS(on) = 5.5Ω(Max) •Fast Switching •APPLICATIONS •Switch mode power supply.

文件：54.54 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 1N50A is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch

文件：194.12 Kbytes 页数：5 Pages

UTC

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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 1N50A is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanch

文件：194.12 Kbytes 页数：5 Pages

UTC

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1.0A, 500V N-CHANNEL POWER MOSFET

The UTC 1N50A is an N-channel mode power MOSFET usingUTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutatio • RDS(ON) < 8.0Ω @ VGS=10V, ID=0.5A \n• High Switching Speed \n• 100% Avalanche Tested;

UTC

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